Hot carrier reliability improvement of PMOS I/O's transistor in advanced CMOS technology
نویسندگان
چکیده
Boron diffusion has previously involved Hot Carrier Injection (HCI) reliability problems for pMOS transistors. Introduction of phosphorus into channel of pMOS I/O's transistors in 0.12μm technology enables to significantly improve HCI reliability while short channel effect is better controlled and performances are slightly improved.
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تاریخ انتشار 2002